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 SD4600
RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS
.GOLD .860.26 .EFFI .P
PRELIMINARY DATA
METALLIZATION 960 MHz VOLTS CIENCY 50% MIN. OUT = 60 W MIN. WITH 7.5 dB GAIN
.438 x .450 2LFL (M173) epoxy sealed ORDER CODE BRANDING SD4600 SD4600
PIN CONNECTION
DESCRIPTION The SD4600 is designed for 960MHz mobile base stations in both analog and digital applications. Including double input and output matching networks, the SD4600 features high impedances allowing operation over the full 860 to 960 MHz bandwidth. ABSOLUTE MAXIMUM RATINGS (T case = 25 C)
Symbol Parameter Value Unit
1. Collector 2. Base
3. Emitter
VCBO VCEO VEBO IC PDISS TJ T STG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
60 28 3.5 8 146 +200 - 65 to +150
V V V A W C C
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 1.2 C/W
*Applies only to rated RF amplifier operation
November 1992
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SD4600
ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC (Total Device)
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO BVCEO I CEO hFE
IC = 100mA IE = 20mA IC = 100mA VCE = 25V VCE = 5V IC = 3A
60 3.5 28 -- 25
-- -- -- -- --
-- -- -- 30 80
V V V mA --
DYNAMIC (Total Device)
Symbol Test Conditions Value Min. Typ. Max. Unit
POUT c GP VSWR
f = 960MHz f = 960MHz f = 960MHz f = 960MHz
VCC = 26V VCC = 26V VCC = 26V VCC = 26V
ICQ = .200A ICQ = .200A ICQ = .200A
60 50 7.5 5:1
65 58 8.0 --
-- -- -- --
W % dB --
TYPICAL PERFORMANCE POWER OUTPUT & COLLECTOR EFFICIENCY vs POWER INPUT
POUT
C
FREQ = 960MHz VCC = 26V ICQ = 200mA
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SD4600
IMPEDANCE DATA
TYPICAL INPUT IMPEDANCE ZIN ZCL L
TYPICAL COLLECTOR LOAD IMPEDANCE ZCL
H
H ZIN
L
FREQ. 860 MHz 900 MHz 960 MHz
ZIN () 17 + j 10 14 + j 10 12.5 + j 8
ZCL () 11 + j 12 10 + j 10.5 8.5 + j 8.5
POUT = 60W VCC = 26V Normalized to 50ohms
TEST CIRCUIT
C1,C10 : C2,C5 C11,C14: C6,C7 : C8 : C9 : C15 :
120pF Chip Capacitor B Size 470pF Chip Capacitor B Size 100F Electrolytic Capacitor 4.7F Electrolytic Capacitor 10F Electrolytic Capacitor 39,000pF Chip Capacitor
C16 C17 C18 R1, R2 R3 R4 S1
: : : : : : :
63F Capacitor .6 - 4.5pF Johanson Variable Capacitor .8 - 8.0pF Johanson Variable Capacitor 20 (.5W) Chip Resistor 10K Potentiometer 4 3.17K (.25W) Chip Resistor Teflon Glass Er = 2.33 H = .020
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SD4600
PACKAGE MECHANICAL DATA Ref. Dwg. No.: 12-0173
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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